IXGH56N60B3D1 IXYS, IXGH56N60B3D1 Datasheet
IXGH56N60B3D1
Specifications of IXGH56N60B3D1
Related parts for IXGH56N60B3D1
IXGH56N60B3D1 Summary of contents
Page 1
... CES CE CES 0V ± 20V GES 44A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGH56N60B3D1 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 350 = 5Ω 150 G CM 330 - 55 ... +150 150 - 40 ... +150 300 260 1.13/10 ...
Page 2
... J Min. Typ 150°C 1 100°C 100 = 30V J R 1.5 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH56N60B3D1 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source mJ Dim. Millimeter 335 ns Min. A 4.7 165 ...
Page 3
... T = 25ºC J 160 140 120 100 IXGH56N60B3D1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...
Page 4
... C ies 120 100 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH56N60B3D1 Fig. 8. Gate Charge V = 300V 40A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...
Page 5
... V = 15V GE = 480V 130 180 110 160 T = 25º 140 70 120 IXGH56N60B3D1 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current off 5Ω 15V 480V 125º 25º ...
Page 6
... I = 72A 36A 18A 105 115 125 IXGH56N60B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 25ºC, 125º Ω 15V 480V ...
Page 7
... 30A 15A 200 400 600 800 A/μs -di /dt F Fig. 25. Recovery time t versus -di rr DSEP 29-06 s 0.01 0.1 t 0.01 0.1 Time - Seconds IXGH56N60B3D1 100° 300V 60A 30A 15A 1000 0 200 400 600 -di Fig ...