IXGH56N60B3D1 IXYS, IXGH56N60B3D1 Datasheet - Page 4
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IXGH56N60B3D1
Manufacturer Part Number
IXGH56N60B3D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGH56N60B3D1.pdf
(7 pages)
Specifications of IXGH56N60B3D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
350
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
56
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
95
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.375
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
1.5
Package Style
TO-247
IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
100
10
90
80
70
60
50
40
30
20
10
0.0001
0
0
0
f
= 1 MHz
5
20
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
15
I
V
C
0.001
60
CE
- Amperes
- Volts
20
80
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
T
J
100
= - 40ºC
30
125ºC
25ºC
120
35
0.01
Pulse Width - Seconds
140
40
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
0.1
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 40A
= 10mA
= 125ºC
= 5Ω
= 300V
20
200
40
Fig. 8. Gate Charge
Q
300
G
IXGH56N60B3D1
V
- NanoCoulombs
CE
60
- Volts
400
1
80
IXYS REF: G_56N60B3(65) 05-05-08-B
100
500
120
600
10
140