IXGH36N60B3 IXYS, IXGH36N60B3 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGH36N60B3
Manufacturer Part Number
IXGH36N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGH36N60B3.pdf
(6 pages)
Specifications of IXGH36N60B3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
92
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH36N60B3C1
Manufacturer:
SANYO
Quantity:
40 000
Part Number:
IXGH36N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
1.00
0.10
0.01
90
80
70
60
50
40
30
20
10
10
0.00001
0
0
0
20
f
= 1 MHz
5
40
60
10
Fig. 7. Transconductance
80
0.0001
Fig. 9. Capacitance
15
I
C
100
- Amperes
V
CE
120
- Volts
20
140
25
160
Fig. 11. Maximum Transient Thermal Impedance
C oes
C res
0.001
C ies
T
J
180
30
= - 40ºC
125ºC
25ºC
200
35
220
Pulse Width - Seconds
240
40
0.01
16
14
12
10
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
100
0
V
I
I
150
C
G
CE
T
R
dv / dt < 10V / ns
= 30A
= 10mA
J
G
10
= 300V
= 125ºC
= 5
Fig. 10. Reverse-Bias Safe Operating Area
200
Ω
20
0.1
250
Fig. 8. Gate Charge
300
Q
30
G
V
- NanoCoulombs
CE
350
- Volts
IXGH36N60B3
40
400
50
450
1
500
60
550
70
600
650
10
80