IXGH36N60B3 IXYS, IXGH36N60B3 Datasheet - Page 3

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IXGH36N60B3

Manufacturer Part Number
IXGH36N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGH36N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
92
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.5
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH36N60B3C1
Manufacturer:
SANYO
Quantity:
40 000
Part Number:
IXGH36N60B3D1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2010 IXYS CORPORATION, All Rights Reserved
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0.0
0.0
4
0.2
0.2
5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.4
0.4
6
Fig. 5. Collector-to-Emitter Voltage
0.6
0.6
7
vs. Gate-to-Emitter Voltage
I
C
0.8
0.8
= 60A
15A
30A
8
V
V
V
1.0
1.0
CE
CE
GE
9
- Volts
- Volts
- Volts
1.2
1.2
V
GE
10
V
= 15V
1.4
1.4
GE
13V
11V
9V
= 15V
11
13V
11V
9V
1.6
1.6
12
5V
J
7V
1.8
1.8
J
= 125ºC
= 25ºC
7V
5V
13
T
2.0
2.0
J
= 25ºC
14
2.2
2.2
2.4
2.4
15
300
250
200
150
100
240
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
40
0
0
-50
3.5
0
Fig. 2. Extended Output Characteristics @ T
V
GE
4.0
V
-25
= 15V
GE
2
= 15V
4.5
13V
11V
Fig. 4. Dependence of V
0
5.0
4
Fig. 6. Input Admittance
Junction Temperature
T
9V
7V
5V
5.5
J
25
- Degrees Centigrade
V
CE
6
V
6.0
GE
IXGH36N60B3
- Volts
- Volts
50
6.5
8
75
7.0
CE(sat)
I
I
I
C
C
C
T
10
J
= 60A
= 15A
= 30A
7.5
= - 40ºC
100
on
125ºC
25ºC
8.0
J
= 25ºC
12
125
8.5
150
9.0
14

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