IXGH36N60B3 IXYS, IXGH36N60B3 Datasheet
IXGH36N60B3
Specifications of IXGH36N60B3
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IXGH36N60B3 Summary of contents
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... CES CE CES GE = ± 20V 0V, V GES 30A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGH36N60B3 Maximum Ratings 600 = 1MΩ 600 GE ± 20 ± 200 = 5Ω ≤ CES 250 -55 ...
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... CES 0.54 125 100 0 0.9 180 170 1.5 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH36N60B3 TO-247 Outline (IXGH) Max Terminals Gate 3 - Emitter ns Dim. Millimeter mJ Min. Max. 200 ns A 4.7 A 2.2 160 2.2 ...
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... GE 13V 1.3 11V 9V 1.2 1.1 7V 1.0 0.9 5V 0.8 0.7 1.4 1.6 1.8 2.0 2.2 2.4 240 T = 25ºC J 200 160 120 IXGH36N60B3 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance ...
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... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH36N60B3 Fig. 8. Gate Charge V = 300V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC ...
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... IXGH36N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 125º 400V ...
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... Ω 15V 400V 105 115 125 IXGH36N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on ) Ω 15V 400V 125º 25º ...