IXGR60N60C2C1 IXYS, IXGR60N60C2C1 Datasheet - Page 3

• Manufacturer Part Number: IXGR60N60C2C1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGR60N60C2C1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 39
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 54
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): 14
• Rthjc, Max, Diode, (ºc/w): 1.75
• Package Style: ISOPLUS247

© 2009 IXYS CORPORATION, All Rights Reserved
100
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
6
25A
0.4
7
0.4
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
8
vs. Gate-to-Emitter Voltage
0.8
50A
0.8
9
I
1.2
1.2
C
V
= 100A
V
CE
V
CE
@ 125ºC
10
@ 25ºC
GE
- Volts
- Volts
1.6
1.6
- Volts
V
11
GE
V
GE
= 15V
2.0
2.0
13V
11V
= 15V
12
13V
11V
2.4
2.4
T
13
J
= 25ºC
2.8
2.8
14
9V
7V
5V
9V
7V
5V
3.2
3.2
15
300
270
240
210
180
150
120
200
180
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
60
30
80
60
40
20
0
0
-50
3.5
0
V
GE
4.0
Fig. 2. Extended Output Characteristics
2
-25
= 15V
13V
4.5
Fig. 4. Dependence of V
V
GE
4
5.0
= 15V
0
Fig. 6. Input Admittance
7V
Junction Temperature
9V
T
11V
T
J
5.5
J
6
= 125ºC
- Degrees Centigrade
- 40ºC
25
25ºC
V
IXGR60N60C2C1
6.0
CE
V
@ 25ºC
8
GE
- Volts
6.5
50
- Volts
10
7.0
75
I
7.5
12
I
I
C
CE(sat)
C
C
= 100A
= 50A
= 25A
100
8.0
14
on
8.5
125
16
9.0
150
9.5
18