IXGR60N60C2C1 IXYS, IXGR60N60C2C1 Datasheet - Page 2

• Manufacturer Part Number: IXGR60N60C2C1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGR60N60C2C1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 39
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 54
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.50
• If, Tj=110°c, Diode, (a): 14
• Rthjc, Max, Diode, (ºc/w): 1.75
• Package Style: ISOPLUS247

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (SiC)
Symbol
(T
V
R
Note 1.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
F
ies
oes
res
thJC
thCS
thJC
g
ge
gc
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
I
V
I
Inductive Load, T
I
V
Inductive Load, T
I
V
I
Test Conditions
C
C
C
C
Test Conditions
F
CE
CE
CE
= 50A, V
= 50A, V
= 20A, V
= 50A, V
= 25V, V
= 50A, V
= 400V, R
= 400V, R
GE
GE
GE
CE
GE
GE
= 15V
= 15V
= 0V, Note 1
G
G
= 10V, Note 1
= 0V, f = 1MHz
= 15V, V
= 2Ω
= 2Ω
4,835,592
4,881,106
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
T
CES
5,049,961
5,063,307
5,187,117
J
= 125°C
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
30
Min.
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4750
0.88
0.48
0.90
1.20
0.15
Typ.
143
1.65
530
104
157
2.00
Typ.
92
66
27
48
27
52
54
27
50
47
0.50 °C/W
1.75 °C/W
0.80
150
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
2.10
°C/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS247 (IXGR) Outline
IXGR60N60C2C1
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2