IXGR60N60C2C1 IXYS, IXGR60N60C2C1 Datasheet

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IXGR60N60C2C1

Manufacturer Part Number
IXGR60N60C2C1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGR60N60C2C1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
39
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
54
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.50
If, Tj=110°c, Diode, (a)
14
Rthjc, Max, Diode, (ºc/w)
1.75
Package Style
ISOPLUS247
HiperFAST
w/ SiC Anti-Parallel
Diode
(Electrically Isolated Back Surface)
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
T
50/60 Hz, RMS, t = 1minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
I
V
V
I
Clamped Inductive Load
ISOL
C
C
J
J
C
C
C
C
C
GE
CE
CE
= 250μA, V
= 50A, V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
< 1mA
= V
= 0V, V
TM
CES
, V
IGBT
GE
GE
VJ
GE
= ±20V
= 125°C, R
CE
= 15V, Note 1
= 0V
t = 10 s
= V
GE
GE
= 1MΩ
G
= 2Ω
T
T
J
J
= 125°C
= 125°C
IXGR60N60C2C1
20..120/4.5..27
2.5
Min.
Characteristic Values
@ V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
CE
2.17
1.83
= 100
≤ 600
2500
3000
Typ.
300
300
260
250
150
600
600
±20
±30
75
39
14
5
±100
2.70
Max.
250
5.0
2
N/lb
mA
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
High Speed Silicon Carbide Schottky
2500V Electrical Isolation
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Co-Pack Diode
- No Reverse Recovery
CES
CE(sat)
G
C
E
TM
C = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 39A
= 54ns
£
2.7V
ISOLATED TAB
DS100089A(4/09)

Related parts for IXGR60N60C2C1

IXGR60N60C2C1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 50A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved IXGR60N60C2C1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 300 = 2Ω 100 G CM ≤ 600 @ V CE 250 -55 ... +150 150 -55 ...

Page 2

... Characteristic Values Min. Typ. 1. 125°C 2.00 J 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR60N60C2C1 ISOPLUS247 (IXGR) Outline Max 150 0.50 °C/W °C/W Max. 2. 1.75 °C/W ...

Page 3

... V = 15V GE 13V 1.6 11V 9V 1.4 1.2 7V 1.0 0.8 0.6 5V 0.4 2.0 2.4 2.8 3.2 200 180 T = 25ºC J 160 140 120 100 IXGR60N60C2C1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig ...

Page 4

... C ies oes res Fig. 11. Maximum Transient Thermal Impedance for IGBT 0.01 Pulse Width - Seconds IXGR60N60C2C1 Fig. 8. Gate Charge 300V 50A 10mA ...

Page 5

... T = 125ºC 160 J 140 100 120 80 100 25º 100 IXGR60N60C2C1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 125º 25º ...

Page 6

... V = 15V 400V 105 115 125 0.01 0.1 Pulse Width - Seconds IXGR60N60C2C1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 400V 25ºC, 125º Amperes C Fig ...

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