IXGI48N60C3 IXYS, IXGI48N60C3 Datasheet - Page 7
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IXGI48N60C3
Manufacturer Part Number
IXGI48N60C3
Description
High-Frequency Range (>40khz)
Manufacturer
IXYS
Datasheet
1.IXGI48N60C3.pdf
(7 pages)
Specifications of IXGI48N60C3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
38
Rthjc, Max, Igbt, (°c/w)
0.57
If, Tj=110°c, Diode, (a)
0.42
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-263 LEAD
© 2011 IXYS CORPORATION, All Rights Reserved
140
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0
0
25
0
t
T
V
r i
t
R
V
J
CE
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
r i
G
CE
= 125ºC, V
35
= 400V
= 3Ω , V
= 400V
5
45
I
C
GE
GE
t
= 15A, 30A
t
d(on)
d(on)
= 15V
= 15V
10
55
Junction Temperature
- - - -
- - - -
T
I
J
C
Gate Resistance
- Degrees Centigrade
= 60A
65
R
G
15
- Ohms
75
20
85
95
I
I
I
25
C
C
C
= 60A
= 30A
= 15A
105
30
115
125
35
50
45
40
35
30
25
20
15
25
24
23
22
21
20
19
18
17
120
100
80
60
40
20
0
15
Fig. 19. Inductive Turn-on Switching Times vs.
t
V
25ºC < T
R
r i
CE
20
G
= 3Ω , V
= 400V
J
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
25
< 125ºC
GE
t
d(on)
= 15V
30
- - - -
Collector Current
35
I
C
- Amperes
40
45
50
IXYS REF: G_48N60C3(5D) 6-23-11-C
55
60
26
24
22
20
18
16
14