IXGI48N60C3 IXYS, IXGI48N60C3 Datasheet - Page 2

• Manufacturer Part Number: IXGI48N60C3
• Description: High-Frequency Range (>40khz)
• Manufacturer: IXYS

Specifications of IXGI48N60C3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 38
• Rthjc, Max, Igbt, (°c/w): 0.57
• If, Tj=110°c, Diode, (a): 0.42
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263 LEAD

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCS
g
ge
gc
J
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
(TO-220)
I
V
I
(TO-247)
C
C
C
C
CE
CE
CE
= 30A, V
= 30A, V
= 30A, V
= 30A, V
Test Conditions
= 400V, R
= 400V, R
= 25V, V
GE
GE
CE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 3Ω
= 3Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
20
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1960
0.21
0.50
CE
0.41
0.65
0.57
0.23
207
66
77
16
32
19
26
60
38
19
26
92
95
(Clamp), T
30
0.42 °C/W
Max.
100
0.42
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
°C/W
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 Lead (IXGI)
TO-263 AA (IXGA)
TO-220AB (IXGP)
TO-247 (IXGH)
G = Gate
S = Emitter
6,727,585
6,771,478 B2 7,071,537
G
G
C
G
C
E
C E
E
G
E
7,005,734 B2
7,063,975 B2
D
Tab = Collector
C (Tab)
C (Tab)
C (Tab)
C (Tab)
= Collector
7,157,338B2