IXGI48N60C3 IXYS, IXGI48N60C3 Datasheet - Page 5

• Manufacturer Part Number: IXGI48N60C3
• Description: High-Frequency Range (>40khz)
• Manufacturer: IXYS

Specifications of IXGI48N60C3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): 38
• Rthjc, Max, Igbt, (°c/w): 0.57
• If, Tj=110°c, Diode, (a): 0.42
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263 LEAD

© 2011 IXYS CORPORATION, All Rights Reserved
10,000
1,000
0.01
100
0.1
50
40
30
20
10
10
0.00001
0
1
0
0
f
= 1 MHz
5
20
10
Fig. 7. Transconductance
40
0.0001
Fig. 9. Capacitance
15
V
I
C
CE
- Amperes
- Volts
60
20
25
80
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
0.001
30
T
J
= - 40ºC
125ºC
25ºC
100
35
Pulse Width - Seconds
120
40
0.01
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
G
= 30A
= 10 mA
250
= 125ºC
= 300V
= 3Ω
10
Fig. 10. Reverse-Bias Safe Operating Area
IXGI48N60C3 IXGA48N60C3
IXGP48N60C3 IXGH48N60C3
300
20
0.1
350
Fig. 8. Gate Charge
Q
30
G
V
- NanoCoulombs
CE
400
- Volts
40
450
50
1
500
60
550
70
600
650
80
10