IXGA30N60C3D4 IXYS, IXGA30N60C3D4 Datasheet - Page 6

• Manufacturer Part Number: IXGA30N60C3D4
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGA30N60C3D4

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
90
80
70
60
50
40
30
20
10
75
65
55
45
35
25
15
25
4
t
T
V
I
ri
J
CE
Fig. 18. Inductive Turn-on Switching Times vs.
I
Fig. 20. Inductive Turn-on Switching Times vs.
C
= 125ºC, V
C
35
= 40A
= 300V
= 20A
6
45
t
GE
d(on)
8
= 15V
55
- - - -
Junction Temperature
T
J
Gate Resistance
10
- Degrees Centigrade
R
65
G
- Ohms
75
12
I
C
t
R
V
ri
= 40A
CE
G
85
= 5Ω , V
14
= 300V
95
GE
t
I
16
d(on)
C
= 15V
= 20A
105
- - - -
18
115
125
20
21
20
19
18
17
16
15
30
28
26
24
22
20
18
16
14
70
60
50
40
30
20
10
0
10
t
R
V
ri
Fig. 19. Inductive Turn-on Switching Times vs.
G
CE
= 5Ω , V
= 300V
15
GE
t
d(on)
= 15V
- - - -
20
Collector Current
T
J
= 125ºC
I
C
25
- Amperes
IXGA30N60C3D4
IXGP30N60C3D4
30
T
J
= 25ºC
35
IXYS REF: G_30N60C3(4D)05-02-11-A
40
24
22
20
18
16
14
12
10