IXGA30N60C3D4 IXYS, IXGA30N60C3D4 Datasheet - Page 3

• Manufacturer Part Number: IXGA30N60C3D4
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGA30N60C3D4

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-263

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5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
0.4
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage
0.8
0.8
9
vs. Gate-to-Emitter Voltage
1.2
1.2
10
I
V
C
CE
V
= 40A
1.6
V
CE
20A
10A
GE
- Volts
- Volts
1.6
11
- Volts
2.0
V
GE
= 15V
V
2.0
12
13V
11V
GE
2.4
= 15V
13V
J
J
2.4
13
T
= 125ºC
= 25ºC
J
2.8
= 25ºC
11V
2.8
14
9V
7V
3.2
7V
9V
3.2
3.6
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
80
60
40
20
70
60
50
40
30
20
10
0
0
25
0
5
Fig. 2. Extended Output Characteristics @ T
2
6
50
4
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
JunctionTemperature
7
T
J
- Degrees Centigrade
75
8
T
V
J
CE
V
= 125ºC
GE
- 40ºC
- Volts
25ºC
10
8
- Volts
IXGA30N60C3D4
I
IXGP30N60C3D4
C
I
= 10A
C
I
= 20A
100
12
C
= 40A
CE(sat)
9
14
on
V
125
V
16
GE
GE
10
J
= 15V
= 15V
= 25ºC
13V
11V
9V
7V
18
150
11
20