IXGA30N60C3D4 IXYS, IXGA30N60C3D4 Datasheet
IXGA30N60C3D4
Specifications of IXGA30N60C3D4
Related parts for IXGA30N60C3D4
IXGA30N60C3D4 Summary of contents
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... CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGA30N60C3D4 IXGP30N60C3D4 Maximum Ratings 600 600 ± 20 ± 150 = 5Ω ≤ V CES 220 -55 ... +150 150 -55 ... +150 300 260 1 ...
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... 100° 2.5 °C/W 5,049,961 5,237,481 6,162,665 6,404,065 B1 5,063,307 5,381,025 6,259,123 B1 6,534,343 5,187,117 5,486,715 6,306,728 B1 6,583,505 IXGA30N60C3D4 IXGP30N60C3D4 TO-263 Outline 1 = Gate 2 = Collector 3 = Emitter 4 = Collector TO-220 Outline 1 = Gate 2 = Collector Pins Gate 2 - Drain 3 = Emitter 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 ...
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... J 1.1 = 15V 13V 1.0 11V 0.9 9V 0.8 0.7 0.6 7V 0.5 2.0 2.4 2.8 3 25º IXGA30N60C3D4 IXGP30N60C3D4 Volts CE Fig. 4. Dependence CE(sat) JunctionTemperature 40A 20A 10A 100 125 T - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...
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... T = 125º < 10V / ns C res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA30N60C3D4 IXGP30N60C3D4 Fig. 8. Gate Charge NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area = 5Ω 200 300 400 500 V - Volts CE 0 ...
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... R = 5Ω 300V CE 120 80 100 40A, 20A IXGA30N60C3D4 IXGP30N60C3D4 Collector Current Ω 15V 25º Amperes C Gate Resistance d(off 15V 40A 20A ...
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... 20A d(on) = 15V 105 115 125 IXGA30N60C3D4 IXGP30N60C3D4 Collector Current d(on) = 15V 125º 25º Amperes C IXYS REF: G_30N60C3(4D)05-02-11 ...
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... 200 400 600 800 1000 A/μs -di /dt F Fig. 25. Recovery time t versus -di / DSEP 8-06B s 0.01 0 IXGA30N60C3D4 IXGP30N60C3D4 100° 300 200 400 600 A/μ ...