IXGA30N60C3 IXYS, IXGA30N60C3 Datasheet - Page 5

• Manufacturer Part Number: IXGA30N60C3
• Description: High-Frequency Range (>40khz)
• Manufacturer: IXYS

Specifications of IXGA30N60C3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263

© 2011 IXYS CORPORATION, All Rights Reserved
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
180
160
140
120
100
80
60
40
20
0
0
4
25
10
E
T
V
J
off
CE
Fig. 16. Inductive Turn-off Switching Times vs.
t
R
V
= 125ºC , V
E
R
V
fi
CE
G
Fig. 12. Inductive Switching Energy Loss vs.
= 300V
off
CE
G
35
Fig. 14. Inductive Switching Energy Loss vs.
= 5Ω , V
= 5Ω
6
= 300V
= 300V
15
,
45
V
E
GE
GE
GE
on
E
t
8
d(off)
on
= 15V
= 15V
= 15V
- - - -
- - - -
55
T
Junction Temperature
J
- - - -
20
- Degrees Centigrade
Collector Current
Gate Resistance
10
R
65
I
G
T
T
C
J
J
- Ohms
- Amperes
= 25ºC
= 125ºC
12
75
25
I
I
C
C
= 40A
= 20A
85
14
30
95
16
I
I
C
C
105
= 40A
= 20A
35
18
115
125
40
20
110
100
90
80
70
60
50
40
30
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.4
1.2
1
0.8
0.6
0.4
0.2
0
180
160
140
120
100
0.6
0.5
0.4
0.3
0.2
0.1
160
140
120
100
80
80
60
40
20
0
10
25
4
t
T
V
t
R
V
Fig. 15. Inductive Turn-off Switching Times vs.
E
R
V
Fig. 17. Inductive Turn-off Switching Times vs.
I
T
fi
fi
J
CE
CE
G
off
G
CE
C
Fig. 13. Inductive Switching Energy Loss vs.
J
= 125ºC,
35
= 5Ω , V
= 5
= 125ºC
= 40A, 20A
= 300V
= 300V
= 300V
6
Ω ,
15
IXGA30N60C3 IXGP30N60C3
45
V
GE
V
GE
t
t
E
d(off)
GE
d(off)
8
= 15V
on
= 15V
= 15V
- - - -
55
T
Junction Temperature
- - - -
- - - -
J
20
- Degrees Centigrade
Collector Current
Gate Resistance
10
I
C
65
- Amperes
R
G
I
- Ohms
C
12
25
75
= 40A
T
85
J
I
14
= 25ºC
C
= 20A
30
IXGH30N60C3
95
16
105
35
18
115
20
125
40
140
120
100
80
60
40
1.2
1
0.8
0.6
0.4
0.2
0
90
80
70
60
50
40
30
20