IXGA30N60C3 IXYS, IXGA30N60C3 Datasheet
IXGA30N60C3
Specifications of IXGA30N60C3
Related parts for IXGA30N60C3
IXGA30N60C3 Summary of contents
Page 1
... CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Maximum Ratings 600 600 ± 20 ± 150 = 5Ω ≤ V CES 220 -55 ... +150 150 -55 ... +150 ...
Page 2
... Terminals Gate 2 - Collector 3 - Emitter IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 IXGA30N60C3 IXGP30N60C3 Characteristic Values Min. Typ. Max 915 pF 78 ...
Page 3
... J 1.1 = 15V 13V 11V 1.0 0.9 9V 0.8 0.7 0.6 7V 0.5 2.0 2.4 2.8 3 25º 5.5 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Volts CE Fig. 4. Dependence CE(sat) Junction Temperature 40A 20A 10A 100 125 T - Degrees Centigrade J Fig ...
Page 4
... < 10V / ns C res 100 150 Fig. 11. Maximum Transient Thermal Impedance for IGBT 0.001 0.01 Pulse Width - Seconds IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Fig. 8. Gate Charge NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area = 125ºC = 5Ω 200 250 ...
Page 5
... R = 5Ω 300V CE 120 80 100 40A, 20A IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Collector Current Ω 15V 25º Amperes C Gate Resistance d(off 15V 40A 20A ...
Page 6
... 20A d(on) = 15V 105 115 125 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Collector Current d(on) = 15V 125º 25º Amperes C IXYS REF: G_30N60C3(4D)05-02-11 ...