IXGA30N60C3 IXYS, IXGA30N60C3 Datasheet - Page 3

• Manufacturer Part Number: IXGA30N60C3
• Description: High-Frequency Range (>40khz)
• Manufacturer: IXYS

Specifications of IXGA30N60C3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263

© 2011 IXYS CORPORATION, All Rights Reserved
5.5
5.0
4.5
4.0
3.5
3.0
2.5
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
7
0.4
10A
0.4
Fig. 3. Output Characteristics @ T
8
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage
0.8
0.8
9
20A
vs. Gate-to-Emitter Voltage
1.2
I
1.2
C
10
= 40A
V
CE
V
1.6
V
CE
GE
- Volts
- Volts
1.6
11
- Volts
V
2.0
GE
= 15V
V
2.0
13V
11V
12
GE
2.4
= 15V
13V
J
J
2.4
13
T
= 125ºC
J
= 25ºC
2.8
= 25ºC
11V
2.8
9V
7V
14
3.2
7V
9V
3.6
3.2
15
180
160
140
120
100
1.1
1.0
0.9
0.8
0.7
0.6
0.5
70
60
50
40
30
20
10
80
60
40
20
0
0
25
5
0
Fig. 2. Extended Output Characteristics @ T
5.5
2
IXGA30N60C3 IXGP30N60C3
6
50
4
Fig. 4. Dependence of V
6.5
6
Fig. 6. Input Admittance
Junction Temperature
7
T
J
- Degrees Centigrade
75
8
T
7.5
V
J
CE
V
= 125ºC
GE
- 40ºC
- Volts
25ºC
10
8
- Volts
I
C
I
= 10A
C
8.5
I
100
= 20A
12
C
IXGH30N60C3
= 40A
CE(sat)
9
14
9.5
on
V
GE
125
16
V
GE
= 15V
10
J
= 25ºC
= 15V
13V
11V
9V
7V
10.5
18
11
150
20