IXGH100N30B3 IXYS, IXGH100N30B3 Datasheet - Page 5

• Manufacturer Part Number: IXGH100N30B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGH100N30B3

• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247

© 2008 IXYS CORPORATION, All rights reserved
180
160
140
120
100
140
130
120
110
100
100
80
60
40
20
90
80
70
60
50
90
80
70
60
50
40
50
25
2
Fig. 17. Resistive Turn-off Switching Times
Fig. 15. Resistive Turn-on Switching Times
t
T
V
r
J
CE
R
V
V
55
= 125ºC, V
G
GE
CE
35
= 240V
3
= 2Ω
Fig. 13. Resistive Turn-on Rise Time
= 15V
= 240V
60
45
I
t
C
d(on)
4
vs. Collector Current
vs. Junction Temperature
GE
= 50A
65
vs. Gate Resistance
T
J
= 15V
55
- - - -
= 125ºC
T
I
C
J
5
R
70
- Amperes
- Degrees Centigrade
G
65
- Ohms
T
75
J
6
= 25ºC
75
t
R
V
80
f
CE
G
I
I
C
= 2Ω, V
C
7
= 240V
= 100A
= 50A
85
85
I
GE
t
8
C
95
d(off)
90
= 100A
= 15V
- - - -
105
95
9
100
115
10
128
125
122
119
116
113
110
107
104
32
31
30
29
28
27
26
25
24
23
125
160
140
120
100
95
90
85
80
75
70
65
60
55
50
190
185
180
175
170
165
160
155
150
145
80
60
40
20
50
25
Fig. 16. Resistive Turn-off Switching Times
Fig. 18. Resistive Turn-off Switching Times
2
t
R
V
R
V
V
f
CE
G
55
35
G
GE
CE
t
T
V
= 2Ω, V
J
= 2Ω
= 240V
f
CE
3
Fig. 14. Resistive Turn-on Rise Time
= 15V
= 240V
= 125ºC, V
= 240V
45
60
vs. Junction Temperature
I
GE
C
t
T
4
d(off)
= 50A
J
vs. Gate Resistance
= 15V
55
I
- Degrees Centigrade
65
t
C
vs. Collector Current
d(off)
GE
I
= 100A
- - - -
C
= 15V
R
= 50A
5
65
I
I
C
G
- - - -
C
70
T
- Amperes
= 100A
- Ohms
J
= 125ºC
75
6
IXGH100N30B3
75
85
7
80
T
95
J
I
IXYS REF: G_200N30PB(75)7-05-08-D
= 25ºC
C
8
85
= 100A
105
90
9
115
95
125
10
280
260
240
220
200
180
160
140
120
100
127
124
121
118
115
112
109
106
100