IXGH100N30B3 IXYS, IXGH100N30B3 Datasheet - Page 3

• Manufacturer Part Number: IXGH100N30B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGH100N30B3

• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247

© 2008 IXYS CORPORATION, All rights reserved
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
0
0.0
0.0
6
0.2
0.2
7
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
8
0.6
0.6
I
C
9
= 200A
0.8
0.8
100A
V
50A
V
CE
V
GE
@ 125ºC
@ 25ºC
1.0
CE
1.0
10
- Volts
- Volts
- Volts
1.2
1.2
11
V
GE
1.4
1.4
= 15V
V
GE
12
13V
11V
= 15V
1.6
1.6
13V
11V
T
13
J
1.8
1.8
= 25ºC
9V
7V
9V
7V
14
2.0
2.0
2.2
2.2
15
350
300
250
200
150
100
220
200
180
160
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
4.0
-50
0
V
GE
Fig. 2. Extended Output Characteristics
4.5
-25
= 15V
1
Fig. 4. Dependence of V
V
GE
5.0
= 15V
Fig. 6. Input Admittance
0
13V
11V
Junction Temperature
T
5.5
J
2
- Degrees Centigrade
25
9V
7V
V
T
GE
J
6.0
@ 25ºC
V
IXGH100N30B3
= 125ºC
CE
- Volts
- 40ºC
50
3
25ºC
- Volts
6.5
I
I
I
75
C
C
C
= 200A
= 100A
= 50A
7.0
4
CE(sat)
100
7.5
on
5
125
8.0
150
8.5
6