IXGH100N30B3 IXYS, IXGH100N30B3 Datasheet
IXGH100N30B3
Specifications of IXGH100N30B3
Related parts for IXGH100N30B3
IXGH100N30B3 Summary of contents
Page 1
... GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH100N30B3 Maximum Ratings 300 = 1MΩ 300 GE ±20 ±30 75 100 400 = 2Ω 200 G CM ≤ ≤ ≤ ≤ ≤ 300V CE 460 -55 ...
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... CES 110 124 148 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH100N30B3 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source ns Dim. Millimeter ns Min. Max 2.2 2. ...
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... V = 15V GE 13V 11V 9V 7V 1.2 1.4 1.6 1.8 2.0 2.2 220 200 T = 25ºC J 180 160 140 120 100 IXGH100N30B3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.5 1.4 I 1.3 1.2 1.1 I 1.0 0.9 0.8 I 0.7 -50 -25 ...
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... IXGH100N30B3 Fig. 8. Gate Charge V = 150V 100A 10mA 100 120 Q - NanoCoulombs G Fig. 10. Capacitance MHz ...
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... V = 15V 175 GE 119 = 240V 170 116 165 113 160 110 155 107 150 145 104 100 IXGH100N30B3 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current R = 2Ω 15V 240V 125º ...