IXXN200N60B3 IXYS, IXXN200N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXXN200N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXN200N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 280
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 160
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 3.45
• Rthjc, Max, Igbt (c/w): 0.16
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
1000
100
110
100
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
External Lead Limit
20
= 175ºC
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
40
10
Fig. 7. Transconductance
60
10
Fig. 9. Capacitance
15
80
V
DS
C ies
C oes
C res
I
V
C
CE
- Volts
- Amperes
100
- Volts
20
T
J
= - 40ºC, 25ºC, 150ºC
120
25
100
140
30
160
DC
35
180
25µs
100µs
1ms
10ms
100ms
1000
200
40
0.0001
0.001
400
300
200
100
0.01
16
14
12
10
0.1
0.00001
0
8
6
4
2
0
1
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
J
CE
G
Fig. 12. Maximum Transient Thermal Impedance
= 200A
= 10mA
= 150ºC
= 1
= 300V
40
Fig. 10. Reverse-Bias Safe Operating Area
0.0001
Ω
200
80
0.001
Fig. 8. Gate Charge
300
120
Pulse Width - Seconds
Q
G
- NanoCoulombs
V
CE
IXXN200N60B3
160
- Volts
0.01
400
200
0.1
500
240
1
280
600
320
10