IXXN200N60B3 IXYS, IXXN200N60B3 Datasheet - Page 3

• Manufacturer Part Number: IXXN200N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXN200N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 280
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 160
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.7
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 110
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 3.45
• Rthjc, Max, Igbt (c/w): 0.16
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: SOT-227

© 2012 IXYS CORPORATION, All Rights Reserved
200
150
100
200
150
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
50
0
0
0
8
0
0.2
Fig. 3. Output Characteristics @ T
0.4
Fig. 1. Output Characteristics @ T
9
0.4
Fig. 5. Collector-to-Emitter Voltage vs.
100A
0.6
0.8
10
150A
Gate-to-Emitter Voltage
0.8
V
1.2
1
CE
V
11
V
CE
GE
I
- Volts
C
- Volts
1.2
= 200A
- Volts
1.6
12
V
1.4
GE
V
GE
= 15V
= 15V
13V
12V
1.6
13V
12V
13
2
J
J
1.8
= 150ºC
= 25ºC
T
2
J
2.4
14
= 25ºC
10V
11V
8V
6V
9V
11V
10V
9V
8V
7V
5V
2.2
2.8
2.4
15
350
300
250
200
150
100
200
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
-50
0
4
V
Fig. 2. Extended Output Characteristics @ T
GE
V
GE
= 15V
-25
= 15V
13V
2
5
0
Fig. 4. Dependence of V
12V
4
6
Fig. 6. Input Admittance
Junction Temperature
25
11V
10V
T
9V
8V
7V
J
- Degrees Centigrade
V
CE
6
7
50
V
IXXN200N60B3
GE
- Volts
I
T
C
J
- Volts
I
= 200A
C
I
= 150ºC
C
75
= 150A
= 100A
25ºC
8
8
CE(sat)
100
10
9
on
125
- 40ºC
J
= 25ºC
10
12
150
175
11
14