IXXN200N60B3 IXYS, IXXN200N60B3 Datasheet
IXXN200N60B3
Specifications of IXXN200N60B3
Related parts for IXXN200N60B3
IXXN200N60B3 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXN200N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 280 200 160 1000 100 = 1Ω 400 G CM ≤ ...
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... CES 130 48 100 2.85 160 110 2. 4.40 180 215 3.45 0.05 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXN200N60B3 SOT-227B miniBLOC (IXXN) Max 4. 0.16 °C/W °C 6,404,065 B1 ...
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... T = 25ºC 180 J 160 140 120 100 IXXN200N60B3 Fig. 2. Extended Output Characteristics @ 15V GE 13V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 200A 150A C I ...
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... DC 0.0001 100 1000 IXXN200N60B3 Fig. 8. Gate Charge V = 300V 200A 10mA 120 160 200 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...
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... V = 15V 360V 350 240 CE 300 220 250 200 200 180 150 160 100 140 50 120 100 IXXN200N60B3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º ...
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... 15V 360V 100 125 150 IXXN200N60B3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 360V 25º 150º ...