IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet - Page 5

• Manufacturer Part Number: IXTT10N100D2
• Description: D2 Depletion Mode Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT10N100D2

• Vds, Max, (v): 1000
• Id(on), Min, (a): 1.5
• Rds(on), Max, (?): -4.5
• Vgs(off), Max, (v): 5320
• Ciss, Typ, (pf): 70
• Crss, Typ, (pf): 200
• Qg, Typ, (nc): 695
• Pd, (w): 0.18
• Rthjc, Max, (ºc/w): -
• Package Style: TO268

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100,000
10,000
1,000
100
10.000
10
100
1.000
0.300
0.100
0.010
0.001
1
0
10
10
0.00001
0
T
T
Single Pulse
J
C
f
= 150ºC
= 1 MHz
= 25ºC
Fig. 15. Forward-Bias Safe Operating Area
5
R
DS(on)
10
Limit
Fig. 13. Capacitance
@ T
0.0001
15
V
DS
C
V
100
- Volts
DS
= 25ºC
20
- Volts
25
Fig. 17. Maximum Transient Thermal Impedance
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C iss
C oss
C rss
35
DC
1,000
25µs
100µs
1ms
10ms
100ms
Pulse Width - Seconds
40
hvjv
0.01
100
-1
-2
-3
-4
-5
10
5
4
3
2
1
0
1
0
10
0
T
T
Single Pulse
V
I
I
D
G
J
C
DS
20
= 150ºC
= 5A
= 10mA
= 75ºC
Fig. 16. Forward-Bias Safe Operating Area
= 500V
40
R
DS(on)
0.1
60
Limit
Fig. 14. Gate Charge
@ T
Q
80
V
G
DS
- NanoCoulombs
C
100
- Volts
= 75ºC
100
120
IXTH10N100D2
IXTT10N100D2
1
140
IXYS REF: T_10N100D2(8C)04-06-11
160
DC
180
1,000
25µs
100µs
1ms
10ms
100ms
200
10