IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet - Page 4

• Manufacturer Part Number: IXTT10N100D2
• Description: D2 Depletion Mode Power MOSFETs
• Manufacturer: IXYS

Specifications of IXTT10N100D2

• Vds, Max, (v): 1000
• Id(on), Min, (a): 1.5
• Rds(on), Max, (?): -4.5
• Vgs(off), Max, (v): 5320
• Ciss, Typ, (pf): 70
• Crss, Typ, (pf): 200
• Qg, Typ, (nc): 695
• Pd, (w): 0.18
• Rthjc, Max, (ºc/w): -
• Package Style: TO268

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
16
14
12
10
8
6
4
2
0
-50
-50
-4
Fig. 7. Normalized R
V
I
V
GS
D
DS
> 5A
Fig. 11. Normalized Breakdown and Threshold
= 0V
-3.5
-25
= 30V
-25
Voltages vs. Junction Temperature
-3
0
0
Fig. 9. Input Admittance
T
T
-2.5
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
DS(on)
V
GS
V
GS(off)
- Volts
50
50
-2
vs. Junction Temperature
@ V
T
J
DS
-1.5
= 125ºC
75
75
- 40ºC
= 25V
25ºC
BV
DSX
100
100
-1
@ V
GS
= - 5V
-0.5
125
125
150
150
0
2.6
2.2
1.8
1.4
1.0
0.6
16
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
0.4
0
0
V
V
DS
GS
Fig. 12. Forward Voltage Drop of Intrinsic Diode
2
= 30V
= -10V
Fig. 8. R
4
0.5
T
J
T
4
= 125ºC
J
= 25ºC
Fig. 10. Transconductance
DS(on)
8
6
vs. Drain Current
0.6
Normalized to I
T
J
I
I
= 125ºC
D
D
V
8
SD
- Amperes
- Amperes
12
- Volts
10
0.7
T
IXTH10N100D2
IXTT10N100D2
J
= - 40ºC
D
16
12
125ºC
25ºC
= 5A Value
V
GS
14
= 0V
0.8
5V
T
20
J
- - - -
= 25ºC
16
0.9
24
18