IXTT10N100D2 IXYS, IXTT10N100D2 Datasheet - Page 3
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IXTT10N100D2
Manufacturer Part Number
IXTT10N100D2
Description
D2 Depletion Mode Power MOSFETs
Manufacturer
IXYS
Datasheet
1.IXTT10N100D2.pdf
(5 pages)
Specifications of IXTT10N100D2
Vds, Max, (v)
1000
Id(on), Min, (a)
1.5
Rds(on), Max, (?)
-4.5
Vgs(off), Max, (v)
5320
Ciss, Typ, (pf)
70
Crss, Typ, (pf)
200
Qg, Typ, (nc)
695
Pd, (w)
0.18
Rthjc, Max, (ºc/w)
-
Package Style
TO268
© 2011 IXYS CORPORATION, All Rights Reserved
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
0
0
100
1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
200
4
2
Fig. 5. Drain Current @ T
300
3
400
8
4
500
V
V
V
5
DS
DS
DS
12
600
- Volts
- Volts
- Volts
6
700
V
GS
7
V
800
16
J
= 5V
GS
= 100ºC
1V
= 5V
8
J
0V
J
- 2V
- 3V
900
-1V
= 125ºC
= 25ºC
-1V
- 2V
- 3V
0V
V
GS
1000 1100 1200
9
20
= - 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
- 5.00V
10
24
11
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
24
20
16
12
8
4
0
-5.0
0
0
Fig. 2. Extended Output Characteristics @ T
100
-4.8
Fig. 6. Dynamic Resistance vs. Gate Voltage
200
5
-4.6
300
Fig. 4. Drain Current @ T
400
-4.4
10
T
500
J
= 100ºC
-4.2
V
V
V
DS
GS
DS
600
15
- Volts
- Volts
- Volts
-4.0
700
IXTH10N100D2
IXTT10N100D2
T
V
J
GS
800
-3.8
20
= 25ºC
J
= 5V
= 25ºC
∆
2V
1V
V
900
- 2V
- 3V
DS
-1V
0V
-3.6
= 700V - 100V
1000 1100 1200
25
J
= 25ºC
V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
- 4.25V
- 4.50V
- 4.75V
- 5.00V
GS
-3.4
=
-3.2
30