AP4412GM Advanced Power Electronics Corp., AP4412GM Datasheet - Page 5

• Manufacturer Part Number: AP4412GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4412GM

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 33
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 1.5
• Qgd (nc): 5
• Id(a): 7
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

100
0.1
10
1
16
14
12
10
8
6
4
2
0
0.1
0
V
Fig 9. Gate Charge Characteristics
I
Fig 11. Forward Characteristic of
DS
D
0.3
2
=16V
=7A
Tj=150
Q
4
0.5
G
o
Reverse Diode
C
, Total Gate Charge (nC)
6
0.7
V
SD
8
(V)
0.9
10
Tj=25
1.1
12
o
C
1.3
14
1.5
16
1000
100
Fig 10. Typical Capacitance Characteristics
10
3
2
1
0
-50
1
Fig 12. Gate Threshold Voltage v.s.
5
T
Junction Temperature
j
0
, Junction Temperature (
9
13
V
DS
50
(V)
17
AP4412GM
21
o
100
Ciss
Coss
Crss
C )
f=1.0MHz
25
150
29
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