AP4412GM Advanced Power Electronics Corp., AP4412GM Datasheet - Page 3

• Manufacturer Part Number: AP4412GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4412GM

• Vds: 25V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 33
• Rds(on) / Max(m?) Vgs@4.5v: 60
• Qg (nc): 7
• Qgs (nc): 1.5
• Qgd (nc): 5
• Id(a): 7
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

60
55
50
45
40
35
30
25
20
30
25
20
15
10
5
0
0
3
Fig 3. On-Resistance v.s. Gate Voltage
Fig 1. Typical Output Characteristics
T
C
4
=25
1
V
o
DS
C
5
, Drain-to-Source Voltage (V)
2
6
V
GS
3
7
(V)
8
4
9
V
I
T
D
GS
C
8.0V
6.0V
5.0V
5
10V
=7A
=25 ℃
=4.0V
10
11
6
25
20
15
10
1.8
1.6
1.4
1.2
0.8
0.6
5
0
1
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
V
C
I
GS
=150
D
=10V
=7A
1
V
v.s. Junction Temperature
o
T
C
DS
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
50
3
AP4412GM
4
o
100
C)
V
GS
8.0V
6.0V
5.0V
10V
5
=4.0V
150
6
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