AP4412GM Advanced Power Electronics Corp., AP4412GM Datasheet - Page 2
![The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness](/photos/42/36/423648/375s_sml.png)
AP4412GM
Manufacturer Part Number
AP4412GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP4412GM.pdf
(6 pages)
Specifications of AP4412GM
Vds
25V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
33
Rds(on) / Max(m?) Vgs@4.5v
60
Qg (nc)
7
Qgs (nc)
1.5
Qgd (nc)
5
Id(a)
7
Pd(w)
2.5
Configuration
Single N
Package
SO-8
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AP4412GM
Manufacturer:
APEC
Quantity:
25 000
Part Number:
AP4412GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
AP4412GM
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Forward On Voltage
2
copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
j
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
G
D
=7A
=7A
=25℃, I
=V
=2.3Ω
=3.3Ω,V
=V
=10V, I
=25V, V
=20V ,V
=16V
=16V
=25V
=0V, I
=10V, I
=4.5V, I
=±20V
=5V
=0V
G
GS
=0V , V
Test Conditions
Test Conditions
, I
D
S
D
=250uA
=2.3A, V
D
D
D
=250uA
GS
GS
GS
=7A
=7A
=3.5A
=10V
=0V
=0V
S
=1.2V
GS
D
=1mA
=0V
Min.
Min.
25
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
0.03
14.5
218
155
1.5
12
22
63
7
5
7
6
-
-
-
-
-
-
-
-
-
Max. Units
±100
Max. Units
2.08
1.2
33
60
25
3
1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
uA
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
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