AP2532GY Advanced Power Electronics Corp., AP2532GY Datasheet - Page 6

• Manufacturer Part Number: AP2532GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2532GY

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 130
• Rds(on) / Max(m?) Vgs@4.5v: 250
• Qg (nc): 2.7
• Qgs (nc): 0.9
• Qgd (nc): 1.2
• Id(a): 2.4
• Pd(w): 1.14
• Configuration: Complementary N-P
• Package: SOT-26

P-Channel
AP2532GY
360
320
280
240
200
160
120
10
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
A
= 25
0.2
T
-V
Reverse Diode
j
-V
=150
o
GS
C
1
4
SD
-V
0.4
, Gate-to-Source Voltage (V)
o
, Source-to-Drain Voltage (V)
DS
C
, Drain-to-Source Voltage (V)
0.6
2
6
I
T
0.8
D
A
= - 0.3 A
=25
T
o
1
C
j
V
=25
3
8
G
= - 3.0 V
o
C
- 7.0 V
- 5.0 V
-4.5 V
1.2
- 10 V
1.4
4
10
1.5
1.2
0.9
0.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
T
D
G
A
= -0.6 A
= -10 V
= 150
-V
v.s. Junction Temperature
Junction Temperature
o
DS
T
C
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
50
50
4
100
100
V
o
o
G
C)
C)
= - 3.0 V
- 10 V
- 7.0 V
- 5.0 V
- 4.5 V
150
6
150
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