AP2532GY Advanced Power Electronics Corp., AP2532GY Datasheet - Page 4

• Manufacturer Part Number: AP2532GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2532GY

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 130
• Rds(on) / Max(m?) Vgs@4.5v: 250
• Qg (nc): 2.7
• Qgs (nc): 0.9
• Qgd (nc): 1.2
• Id(a): 2.4
• Pd(w): 1.14
• Configuration: Complementary N-P
• Package: SOT-26

N-Channel
AP2532GY
190
170
150
130
110
10
90
70
8
6
4
2
0
3
2
1
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
=25
0.2
V
o
Reverse Diode
T
V
V
C
DS
j
GS
SD
1
4
=150
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
o
C
0.6
6
2
T
I
D
A
= 0.5 A
=25
0.8
o
C
8
3
T
V
j
=25
G
1
= 3.0 V
7.0 V
5.0 V
4.5 V
10 V
o
C
10
1.2
4
1.6
1.2
0.8
0.4
10
1.8
1.4
1.0
0.6
8
6
4
2
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
V
I
A
G
D
= 150
=10V
=1A
v.s. Junction Temperature
Junction Temperature
o
V
C
1
0
0
T
DS
T
j
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
50
50
2
100
100
3
V
o
o
G
C)
C)
= 3.0 V
7.0 V
5.0 V
4.5 V
10 V
150
150
4
4/7