AP2532GY Advanced Power Electronics Corp., AP2532GY Datasheet
AP2532GY
Specifications of AP2532GY
Related parts for AP2532GY
AP2532GY Summary of contents
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... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SOT-26 G1 N-channel Parameter 3 AP2532GY RoHS-compliant Product N-CH BV 30V DSS R 130mΩ DS(ON) I 2.4A D P-CH BV -30V DSS R 250mΩ DS(ON) I -1. ...
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... AP2532GY N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... =±20V =-1. =-10V DS V =-4. =-15V DS I =-0. =3.3Ω, =25Ω = =-10V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-0.9A =-1.2A dI/dt=100A/µs AP2532GY Min. Typ. =-250uA -30 - =-0. =-0. =-250uA -1.2 - =-1A - 1 =-10V - ...
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... AP2532GY N-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 190 170 150 130 110 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP2532GY f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.01 T Single Pulse Duty factor = t/T ...
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... AP2532GY P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 360 320 280 240 200 160 120 Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage 2.0 1.5 1 =150 C j 0.5 0.0 0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... Fig 8. Typical Capacitance Characteristics 1 0.1 100us 1ms 10ms 0.01 100ms 1s DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP2532GY f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0.05 0. 0.2 T Single Pulse Duty factor = t/T ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : SOT- Part Marking Information & Packing : SOT-26 YEXX SYMBOLS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Date Code Millimeters MIN NOM MAX A 2.70 2.90 3.10 B 2.60 2.80 3.00 C 1.40 1.60 1.80 D 0.30 0.43 0.55 E 0.00 0.05 0.10 H 1.20REF G 1 ...