AP2306CGN-HF Advanced Power Electronics Corp., AP2306CGN-HF Datasheet - Page 4

• Manufacturer Part Number: AP2306CGN-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2306CGN-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 11
• Qgs (nc): 1.2
• Qgd (nc): 44
• Id(a): 5.5
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

AP2306CGN-HF
0.01
100
0.1
10
1
9
8
7
6
5
4
3
2
1
0
0.01
Fig 9. Maximum Safe Operating Area
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
90%
10%
V
I
V
Single Pulse
D
GS
T
2
DS
=5A
A
=25
V
Q
4
DS
0.1
V
o
t
G
V
C
d(on)
DS
, Drain-to-Source Voltage (V)
V
DS
, Total Gate Charge (nC)
=10V
6
DS
=12V
t
=16V
r
8
1
10
12
t
d(off)
10
14
t
f
100us
1ms
10ms
100ms
1s
DC
16
100
18
Fig 10. Effective Transient Thermal Impedance
Fig 8. Typical Capacitance Characteristics
0.001
1000
0.01
800
600
400
200
0.1
0
0.0001
1
1
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
0.05
0.02
0.01
V
0.1
0.2
0.001
G
DUTY=0.5
5
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
9
Q
Q
0.1
Charge
G
GD
13
1
Duty factor = t/T
Peak T
Rthja = 270℃/W
17
P
DM
j
10
= P
DM
t
x R
thja
T
f=1.0MHz
21
+ T
100
a
C
C
C
Q
oss
iss
rss
1000
25
4