AP2306CGN-HF Advanced Power Electronics Corp., AP2306CGN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2306CGN-HF
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2306CGN-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 11
• Qgs (nc): 1.2
• Qgd (nc): 44
• Id(a): 5.5
• Pd(w): 1.38
• Configuration: Single N
• Package: SOT-23

32
30
28
26
24
22
20
20
16
12
8
4
0
8
6
4
2
0
Fig 3. On-Resistance v.s. Gate Voltage
0
0
0
Fig 1. Typical Output Characteristics
Fig 5. Forward Characteristic of
1
0.2
V
T
V
2
GS
V
A
DS
=25
SD
, Gate-to-Source Voltage (V)
Reverse Diode
2
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
0.4
C
T
4
j
=150
3
0.6
o
C
4
6
0.8
T
5
I
A
T
D
=25
=5A
j
8
V
=25
1
o
G
6
C
=2.0V
o
5.0V
4.5V
3.5V
2.5V
C
1.2
10
7
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig 2. Typical Output Characteristics
20
16
12
1
8
4
0
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
-50
-50
0
I
V
D
v.s. Junction Temperature
G
=5A
1
=4.5V
V
T
Junction Temperature
DS
T
j
2
0
0
, Junction Temperature (
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
T
A
3
=150
AP2306CGN-HF
50
o
50
4
C
5
100
100
6
o
o
C )
C)
V
G
=2.0V
7
5.0V
4.5V
3.5V
2.5V
150
150
8
3