AP2306CGN-HF Advanced Power Electronics Corp., AP2306CGN-HF Datasheet

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device

AP2306CGN-HF

Manufacturer Part Number
AP2306CGN-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2306CGN-HF

Vds
20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
30
Rds(on) / Max(m?) Vgs@2.5v
45
Qg (nc)
11
Qgs (nc)
1.2
Qgd (nc)
44
Id(a)
5.5
Pd(w)
1.38
Configuration
Single N
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2306CGN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
, V
, V
GS
GS
D
@ 4.5V
@ 4.5V
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
1.38
+12
AP2306CGN-HF
5.5
4.4
20
20
DS(ON)
DSS
Value
90
D
S
200904271
30mΩ
5.5A
Units
℃/W
20V
Unit
W
V
V
A
A
A
1

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AP2306CGN-HF Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 4. 4. Parameter 3 AP2306CGN-HF Halogen-Free Product BV 20V DSS R 30mΩ DS(ON Rating Units 20 V +12 V 5 ...

Page 2

... AP2306CGN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... I =5A D =5A V =4.5V 1 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.4 1 0.8 0.6 0.4 0.2 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. AP2306CGN- =150 C 5.0V A 4.5V 3.5V 2.5V V =2. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP2306CGN- = =10V =12V =16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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