AP2305GN-HF Advanced Power Electronics Corp., AP2305GN-HF Datasheet - Page 4

• Manufacturer Part Number: AP2305GN-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2305GN-HF

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 53
• Rds(on) / Max(m?) Vgs@4.5v: 65
• Rds(on) / Max(m?) Vgs@2.5v: 100
• Qg (nc): 13
• Qgs (nc): 1.4
• Qgd (nc): 4
• Id(a): -4.2
• Pd(w): 1.38
• Configuration: Single P
• Package: SOT-23

AP2305GN-HF
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
Single Pulse
I
V
90%
10%
T
DS
V
D
DS
A
= -4A
GS
= -16V
=25
5
-V
o
DS
Q
C
t
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
10
1
t
r
15
20
10
t
d(off)
100us
1ms
10ms
100ms
1s
DC
t
f
25
100
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
DUTY=0.5
0.05
0.02
0.1
0.01
0.2
V
Single Pulse
G
0.001
5
Q
-V
GS
DS
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
9
Q
Q
0.1
Charge
G
GD
13
1
65mΩ
P
Duty factor = t/T
Peak T
Rthja = 270℃/W
DM
17
10
j
= P
t
DM
T
x R
thja
f=1.0MHz
21
100
+ T
Coss
Crss
Ciss
a
Q
1000
25
4