AP2305GN-HF Advanced Power Electronics Corp., AP2305GN-HF Datasheet - Page 3

• Manufacturer Part Number: AP2305GN-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2305GN-HF

• Vds: -20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 53
• Rds(on) / Max(m?) Vgs@4.5v: 65
• Rds(on) / Max(m?) Vgs@2.5v: 100
• Qg (nc): 13
• Qgs (nc): 1.4
• Qgd (nc): 4
• Id(a): -4.2
• Pd(w): 1.38
• Configuration: Single P
• Package: SOT-23

52
50
48
46
44
42
40
20
16
12
8
4
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
1
Fig 3. On-Resistance v.s. Gate Voltage
0
0
Fig 5. Forward Characteristic of
-V
-V
Reverse Diode
-V
1
DS
GS
T
0.4
2
SD
j
, Drain-to-Source Voltage (V)
=150
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
o
2
C
T
A
0.8
=25
3
T
I
D
A
o
T
C
=-4.2A
=25
3
j
=25
o
C
o
1.2
4
C
V
G
4
= -1.5V
-5.0V
-4.5V
-3.5V
-2.5V
1.6
5
5
20
16
12
1.6
1.4
1.2
0.8
0.6
1.4
1.2
0.8
0.6
8
4
0
1
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
Fig 6. Gate Threshold Voltage v.s.
V
A
I
= 1 5 0
GS
D
= -4.2A
= -4.5V
v.s. Junction Temperature
-V
Junction Temperature
T
o
T
C
j
1
DS
j
0
0
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
2.01E+08
50
50
2
AP2305GN-HF
65mΩ
100
100
3
o
o
V
C)
C)
G
= -1.5V
-5.0V
-4.5V
-3.5V
-2.5V
150
150
4
3