AP2305GN-HF Advanced Power Electronics Corp., AP2305GN-HF Datasheet

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AP2305GN-HF

Manufacturer Part Number
AP2305GN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2305GN-HF

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@10v
53
Rds(on) / Max(m?) Vgs@4.5v
65
Rds(on) / Max(m?) Vgs@2.5v
100
Qg (nc)
13
Qgs (nc)
1.4
Qgd (nc)
4
Id(a)
-4.2
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2305GN-HF
Manufacturer:
ALTERA
Quantity:
2
Part Number:
AP2305GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-amb
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
D
G
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
G
D
+ 12
1.38
0.01
- 20
-4.2
-3.4
-10
DS(ON)
DSS
AP2305GN-HF
Value
90
D
S
200912168
65mΩ
- 4.2A
-20V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP2305GN-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2305GN-HF Halogen-Free Product BV -20V DSS R 65mΩ DS(ON 4. Rating Units - ...

Page 2

... AP2305GN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -4. -4.5V GS 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance 1.4 1 0.8 0.6 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP2305GN- -5.0V -4.5V -3.5V -2.5V 65mΩ -1. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 2.01E+ 100 o T ...

Page 4

... AP2305GN- - -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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