STB20NM50FD STMicroelectronics, STB20NM50FD Datasheet - Page 4

• Manufacturer Part Number: STB20NM50FD
• Description: N-Channel 500V - 0.22Ohm - 20A - D2PAK FDmesh(TM) POWER MOSFET (with FAST DIODE)
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 5.
Table 6.
1.
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DSS
GSS
Rg
Q
fs
oss
oss eq.
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
I
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 16)
I
V
V
V
V
V
D
D
GS
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
STB20NM50FD - STF20NM50FD - STP20NM50FD
= 10 A
= 250 µA, V
= V
= 10 V, I
> I
= 25V, f =1 MHz,
= 0
= 0, V
= 400 V, I
= 10 V
= Max rating,
= ± 30 V
= Max rating,@125 °C
Test conditions
Test conditions
D(on)
GS
, I
DS
D
x R
D
= 0 to 400 V
= 10 A
= 250 µA
D
GS
DS(on)max
= 20 A
= 0
,
Min.
Min.
500
3
1380
Typ.
0.22
Typ.
290
130
2.8
40
38
18
10
4
9
oss
± 100
Max.
Max.
0.25
when V
10
53
1
5
DS
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω