STB20NM50FD STMicroelectronics, STB20NM50FD Datasheet - Page 3

• Manufacturer Part Number: STB20NM50FD
• Description: N-Channel 500V - 0.22Ohm - 20A - D2PAK FDmesh(TM) POWER MOSFET (with FAST DIODE)
• Manufacturer: STMicroelectronics

STB20NM50FD - STF20NM50FD - STP20NM50FD
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
dv/dt
Symbol
R
Symbol
R
R
I
SD
DM
P
V
V
V
T
thj-case
thj-amb
thj-pcb
E
I
I
TOT
I
T
ISO
GS
DS
stg
T
D
D
AS
AS
j
(2)
≤ 20 A, di/dt ≤ 200 A/µs, V
l
(3)
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-amb max
Thermal resistance junction-pcb max
Maximum lead temperature for
soldering purposes
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
C
=25 °C)
Parameter
DD
Parameter
C
Parameter
= 80% V
D
= 25 °C
GS
= I
=0)
AS
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
= 35 V)
TO-220
62.5
--
0.65
TO-220
D²PAK
D²PAK
192
30
20
14
80
--
300
--
-65 to 150
Max value
Value
± 30
500
150
20
700
10
TO-220FP
TO-220FP
Electrical ratings
62.5
20
2500
2.8
14
80
--
45
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
°C
W
A
V
V
A
A
A
V
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