STM8L151G3 STMicroelectronics, STM8L151G3 Datasheet - Page 95
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STM8L151G3
Manufacturer Part Number
STM8L151G3
Description
STM8L-Ultra Low Power-8 bits Microcontrollers
Manufacturer
STMicroelectronics
Datasheet
1.STM8L151G2.pdf
(111 pages)
Specifications of STM8L151G3
Operating Power Supply
1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
Temperature Range
-40 to 85 or 125 °C
5 Low Power Modes
Wait, Low power run, Low power wait, Active-halt with RTC, Halt
Ultralow Leakage Per I/0
50 nA
Fast Wakeup From Halt
5 μs
Max Freq
16 MHz, 16 CISC MIPS peak
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STM8L151x2, STM8L151x3
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 52.
1. Data based on characterization results, not tested in production.
Static latch-up
●
Table 53.
V
V
Symbol
ESD(HBM)
ESD(CDM)
LU: 3 complementary static tests are required on 6 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Symbol
LU
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Static latch-up class
Ratings
Doc ID 018780 Rev 3
Parameter
Conditions
T
A
= +25 °C
Electrical parameters
Maximum
value
2000
Class
500
II
(1)
95/111
Unit
V