STM8L151G3 STMicroelectronics, STM8L151G3 Datasheet - Page 94

• Manufacturer Part Number: STM8L151G3
• Description: STM8L-Ultra Low Power-8 bits Microcontrollers
• Manufacturer: STMicroelectronics

Specifications of STM8L151G3

• Operating Power Supply: 1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
• Temperature Range: -40 to 85 or 125 °C
• 5 Low Power Modes: Wait, Low power run, Low power wait, Active-halt with RTC, Halt
• Ultralow Leakage Per I/0: 50 nA
• Fast Wakeup From Halt: 5 μs
• Max Freq: 16 MHz, 16 CISC MIPS peak

Electrical parameters
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Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 50.
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm IEC61967-2 which specifies the board and the loading of each pin.
Table 51.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Symbol
Symbol
V
V
FESD
EFTB
S
EMI
Voltage limits to be applied on
any I/O pin to induce a functional
disturbance
Fast transient voltage burst limits
to be applied through 100 pF on
V
functional disturbance
DD
Peak level
EMS data
EMI data
Parameter
and V
SS
Parameter
pins to induce a
(1)
V
T
LQFP48
conforming to
IEC61967-2
A
DD
= +25 °C,
Doc ID 018780 Rev 3
= 3.6 V,
Conditions
V
f
conforms to IEC 61000
V
f
conforms to IEC 61000
CPU
CPU
DD
DD
= 16 MHz,
= 3.3 V, T
= 3.3 V, T
= 16 MHz,
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
A
A
= +25 °C,
= +25 °C,
Conditions
STM8L151x2, STM8L151x3
Using HSI
Using HSE
Max vs.
16 MHz
-3
9
2
4
Level/
Class
dBμV
Unit
2B
4A
2B
-