STM32F205VB STMicroelectronics, STM32F205VB Datasheet - Page 116
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STM32F205VB
Manufacturer Part Number
STM32F205VB
Description
High-performance ARM Cortex-M3 MCU with 128 Kbytes Flash, 120 MHz CPU, ART Accelerator
Manufacturer
STMicroelectronics
Datasheet
1.STM32F205VE.pdf
(170 pages)
Specifications of STM32F205VB
10/100 Ethernet Mac With Dedicated Dma
supports IEEE 1588v2 hardware, MII/RMII
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Electrical characteristics
Note:
116/170
Table 64.
1. Better performance could be achieved in restricted V
2. Based on characterization, not tested in production.
3. If IRROFF is set to V
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for I
Section 5.3.16
Figure 50. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. Ideal transfer curve.
3. End point correlation line.
4. E
Symbol
a
temperature range.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
EO
EG
ED
ET
EL
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
ADC accuracy
does not affect the ADC accuracy.
Parameter
DD
, this value can be lowered to 1.65 V when the device operates in a reduced
(1)
Doc ID 15818 Rev 8
f
f
V
PCLK2
ADC
DDA
= 30 MHz, R
= 1.8
= 60 MHz,
Test conditions
DD
(3)
, frequency and temperature ranges.
to 3.6 V
AIN
< 10 kΩ,
INJ(PIN)
STM32F205xx, STM32F207xx
and ΣI
±1.5
±1.5
±1.5
Typ
±2
±1
INJ(PIN)
Max
±2.5
±3
±2
±5
±3
(2)
in
Unit
LSB