STTH1210 STMicroelectronics, STTH1210 Datasheet - Page 4

• Manufacturer Part Number: STTH1210
• Description: Ultrafast recovery - high voltage diode
• Manufacturer: STMicroelectronics

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
35
30
25
20
15
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
0
25
I
0
Q (µC)
0
RM
rr
V
T
(A)
j
R
=125°C
V
T
=600V
50
j
R
=125°C
50
I
=600V
F
=0.5 x I
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges
versus dI
Relative variations of dynamic
parameters versus junction
temperature
F(AV)
S
50
factor
I
Q
RM
RR
150
150
200
200
F
F
/dt (typical values)
/dt (typical values)
I
dI /dt(A/µs)
t
F
RR
= I
250
250
75
F
F(AV)
dI /dt(A/µs)
I
F
300
= 2 x I
300
F
T (°C)
F(AV)
j
350
350
I
F
= I
100
Reference: T
I
F(AV)
F
= 2 x I
400
400
V
I
I
F
F
R
=0.5 x I
= I
=600V
F(AV)
F(AV)
j
=125°C
450
450
F(AV)
500
500
125
Figure 6.
Figure 8.
Figure 10. Transient peak forward voltage
500
450
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
45
40
35
30
25
20
15
10
50
5
0
0
0
V
0
0
t (ns)
S factor
FP
rr
T
I
F
j
(V)
=125°C
= I
50
50
F(AV)
Reverse recovery time versus dI
(typical values)
(typical values)
versus dI
Softness factor versus dI
100
I
100
100
F
= 2 x I
F(AV)
dI /dt(A/µs)
150
150
F
200
200
200
F
/dt (typical values)
I
F
dI /dt(A/µs)
250
= I
250
F
F(AV
dI /dt(A/µs)
)
F
300
300
300
I
F
350
350
=0.5 x I
F(AV)
400
400
400
F
I
T
F
V
V
T
= 2 x I
STTH1210
R
j
=125°C
/dt
j
R
=125°C
=600V
=600V
450
450
F(AV)
500
500
500
F
/dt