STTH1210 STMicroelectronics, STTH1210 Datasheet - Page 3

• Manufacturer Part Number: STTH1210
• Description: Ultrafast recovery - high voltage diode
• Manufacturer: STMicroelectronics

STTH1210
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
RM
t
t
S
5
0
FP
rr
fr
1.E-03
0
P(W)
Z
th(j-c)
Single pulse
TO-220AC
TO-220Ins
1
D²PAK
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
/R
2
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
3
4
=0.05
1.E-02
5
Parameter
6
=0.1
I
F(AV)
7
(A)
8
t (s)
=0.2
p
9
1.E-01
10 11 12 13 14 15
T
=0.5
I
V
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
F
j
R
R
R
R
FR
1.E+00
= 1 A, dI
= 1 A, dI
= 12 A, dI
= 12 A, dI
= 12 A
= 12 A, dI
= 25° C
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
=1
= 1.5 x V
Test conditions
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
F
F
F
j
j
dI
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs,
= 25° C
= 25° C
Fmax
j
j
F
= 125° C
= 125° C
120
110
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
/dt = 50 A/µs
90
80
70
60
50
40
30
20
10
1.E-03
0
0.0
Z
, T
I
FM
th(j-c)
TO-220FPAB
Single pulse
j
(A)
= 25° C
0.5
/R
th(j-c)
forward current
impedance junction to case versus
pulse duration
Forward voltage drop versus
Relative variation of thermal
1.0
1.E-02
(Maximum values)
T
(Typical values)
j
=150°C
1.5
T
j
=150°C
2.0
1.E-01
Min.
2.5
3.0
t (s)
p
Typ
67
48
15
(Maximum values)
V
2
5
3.5
1.E+00
FM
Characteristics
T
j
=25°C
(V)
4.0
Max.
400
90
65
20
4.5
1.E+01
Unit
5.0
ns
ns
A
V
3/11