STTH312 STMicroelectronics, STTH312 Datasheet - Page 3

• Manufacturer Part Number: STTH312
• Description: Ultrafast recovery - 1200 V diode
• Manufacturer: STMicroelectronics

STTH312
Table 4.
Figure 1.
Figure 3.
Symbol
V
7
6
5
4
3
2
1
0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
RM
0.0
t
t
1.E-03
S
FP
rr
fr
P(W)
Z
th(j-c)
Single pulse
Reverse recovery time
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
0.5
/R
th(j-c)
Dynamic characteristics
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
δ = 0.05
1.0
1.E-02
Parameter
1.5
δ = 0.1
I
F(AV)
t (s)
p
(A)
2.0
δ = 0.2
1.E-01
2.5
δ = 0.5
δ
=tp/T
3.0
I
V
I
V
I
V
I
V
I
V
I
T
F
F
F
F
F
F
δ = 1
T
j
R
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 3 A, dI
= 3 A, dI
= 3 A
= 3 A, dI
= 25° C
= 30 V, T
= 30 V, T
= 600 V, T
= 600 V, T
1.E+00
tp
= 1.5 x V
3.5
Test conditions
F
F
F
F
F
dI
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = -200 A/µs,
/dt = 50 A/µs,
j
j
= 25° C
= 25° C
F
Fmax
j
j
/dt = 50 A/µs
= 125° C
= 125° C
50
45
40
35
30
25
20
15
10
24
22
20
18
16
14
12
10
5
0
8
6
4
2
0
0.0
0
I
I
RM
FM
, T
V =600V
T =125°C
j
(A)
R
(A)
j
0.5
50
= 25° C
I =0.5 x I
F
forward current
Peak reverse recovery current
versus dI
100
Forward voltage drop versus
1.0
F(AV)
(typical values)
150
1.5
T =150°C
j
I =I
F
200
2.0
F(AV)
dI /dt(A/µs)
(maximum values)
F
F
/dt (typical values)
T =150°C
j
250
Min.
2.5
V
FM
300
3.0
(V)
I =2 x I
F
Typ
9.5
55
12
(maximum values)
2
350
3.5
F(AV)
Characteristics
T =25°C
j
400
Max.
4.0
115
350
80
14
450
4.5
Unit
ns
ns
500
A
V
5.0
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