STTH812 STMicroelectronics, STTH812 Datasheet - Page 4

• Manufacturer Part Number: STTH812
• Description: Ultrafast recovery -1200 V diode
• Manufacturer: STMicroelectronics

Characteristics
4/11
Figure 5.
Figure 7.
Figure 9.
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
5
0
0
I
0
25
Q (µC)
RM
V =600V
T =125°C
V =600V
T =125°C
rr
R
j
R
j
(A)
50
50
100
100
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
Relative variations of dynamic
parameters versus junction
temperature
Q
I
RM
RR
F
50
I =0.5 x I
F
/dt (typical values)
150
150
S factor
F(AV)
t
rr
200
200
dI /dt(A/µs)
dI /dt(A/µs)
F
I =0.5 x I
F
I =2 x I
/dt (typical values)
F
F
F
I =I
T (°C)
F
I =I
F
250
250
j
F(AV)
75
F(AV)
F(AV)
F(AV)
300
300
I =2 x I
F
350
350
F(AV)
100
400
Reference: T =125°C
400
V =600V
I =I
F
R
F(AV)
450
450
j
500
125
500
Figure 6.
Figure 8.
Figure 10. Transient peak forward voltage
500
450
400
350
300
250
200
150
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
45
40
35
30
25
20
15
10
50
5
0
0
0
0
V
S factor
0
t (ns)
FP
rr
I =I
T =125°C
F
j
F(AV)
(V)
50
50
Reverse recovery time versus dI
(typical values)
(typical values)
versus dI
100
Softness factor versus dI
100
100
I =2 x I
F
F(AV)
150
150
I =I
F
200
200
200
F(AV)
dI /dt(A/µs)
dI /dt(A/µs)
dI /dt(A/µs)
F
F
/dt (typical values)
F
F
250
250
I =0.5 x I
F
300
300
300
F(AV)
350
350
400
400
400
F
/dt
STTH812
I
V =600V
T =125°C
V =600V
T =125°C
F
450
450
j
R
j
R
≤
2xI
F(AV)
F
500
500
500
/dt