STTH2003 STMicroelectronics, STTH2003 Datasheet - Page 3

• Manufacturer Part Number: STTH2003
• Description: Ultrafast Recovery Rectifier Diode
• Manufacturer: STMicroelectronics

Specifications of STTH2003

• Electrical Insulation: 2000 V DC
• Capacitance: 12 pF

Table 5.
Figure 1.
Figure 3.
Symbol
14
12
10
1.0
0.8
0.6
0.4
0.0
0.2
S factor Softness factor
8
6
4
2
0
1E-3
0
V
P1(W)
I
t
t
RM
Z
FP
rr
fr
th(j-c)
Single pulse
TO-220AB, D 2 PAK, I 2 PAK
/R
Reverse recovery time
Forward recovery time
Peak forward voltage
Reverse recovery current
2
th(j-c)
Recovery characteristics
forward current (per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
Conduction losses versus average
δ = 0.05
Parameter
1E-2
4
δ = 0.1
I
F(AV)
t (s)
p
6
δ = 0.2
(A)
1E-1
8
T
T
T
T
j
j
j
j
δ = 0.5
= 25 °C
= 25 °C
= 25 °C
= 125 °C
δ
=tp/T
10
Doc ID 5377 Rev 10
Test conditions
δ = 1
T
tp
I
I
I
dI
I
dI
V
I
dI
I
dI
1E+0
F
R
F
F
F
F
FR
F
F
F
F
12
= 0.5 A, I
= 1 A, V
= 10 A
= 10 A,
= 10 A, V
= 1 A
/dt = -50 A/µs
/dt = 100 A/µs
/dt = 100 A/µs
/dt = 200 A/µs
= 1.1 x V
Figure 2.
Figure 4.
200
100
10
1.0
0.8
0.6
0.4
0.2
0.0
1
0.50
1E-2
R
I
Z
FM
rr
CC
th(j-c)
= 30 V
Single pulse
= 0.25 A
Fmax
(A)
0.75
= 200 V
/R
th(j-c)
1.00
Forward voltage drop versus
forward current (maximum values,
per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-22FPAB)
T =125°C
j
1.25
1E-1
Min.
1.50
T =75°C
j
V
t (s)
p
1.75
FM
Typ.
0.3
(V)
T =25°C
j
2.00
1E+0
2.25
Max.
230
3.5
25
35
8
2.50
2.75
Unit
ns
ns
V
A
-
1E+1
3/11
3.00