STTH2003 STMicroelectronics, STTH2003 Datasheet - Page 2

• Manufacturer Part Number: STTH2003
• Description: Ultrafast Recovery Rectifier Diode
• Manufacturer: STMicroelectronics

Specifications of STTH2003

• Electrical Insulation: 2000 V DC
• Capacitance: 12 pF

1
Table 2.
Table 3.
Table 4.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation: P = 0.75 x I
2/11
Symbol
Symbol
Symbol
I
R
V
F(RMS)
I
R
V
I
I
I
F(AV)
T
FSM
RSM
R
th(j-c)
RRM
T
F
th(c)
stg
(1)
(2)
j
Repetitive peak reverse voltage
Forward current rms
Average forward current
δ = 0.5
Surge non repetitive forward current
Non repetitive avalanche current
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Reverse leakage current
Forward voltage drop
p
p
Characteristics
Absolute ratings (limiting values, per diode)
Thermal resistance
Static electrical characteristics (per diode)
= 5 ms, δ < 2%
= 380 µs, δ < 2%
Parameter
I
TO-220AB
TO-220FPAB
2
PAK, D
Parameter
Parameter
2
Doc ID 5377 Rev 10
PAK,
T
T
T
T
I
TO-220FPAB
I
TO-220FPAB
2
2
j
j
j
j
PAK, D
PAK, D
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
T
t
t
p
p
c
c
= 10 ms sinusoidal
= 10 µs square
2
2
= 140 °C
= 115 °C
PAK, TO-220AB
PAK, TO-220AB
V
I
F
R
= 10 A
= 300 V
Per diode
Total
Per diode
Total
Per diode
Per device
Min.
F(AV)
+ 0.025 I
Typ.
0.85
30
Value (max)
-65 to + 175
Value
F
300
110
175
2
0.1
2.5
1.3
4.6
3.5
30
10
20
(RMS))
5
4
Max.
1.25
300
20
1
°C/W
Unit
Unit
Unit
µA
°C
°C
V
A
A
A
A
V