STPS10SM80C STMicroelectronics, STPS10SM80C Datasheet - Page 4

• Manufacturer Part Number: STPS10SM80C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS10SM80C

• Insulated Voltage: 2000 V
• Package Capacitance: 45 pF

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Figure 6.
Figure 8.
Figure 10. Reverse leakage current versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
90
80
70
60
50
40
30
20
10
1.E-04
1.E-03
0
Z
I (A)
M
th(j-c)
Single pulse
0
I
I (µA)
M
R
/R
th(j-c)
δ = 0.5
10
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration
reverse voltage applied
(typical values, per diode)
1.E-03
TO-220AB / I PAK / D PAK
20
1.E-02
30
2
T = 150 °C
T = 125 °C
T = 100 °C
T = 75 °C
T = 50 °C
T = 25 °C
j
j
j
j
j
j
1.E-02
40
2
TO-220AB / I PAK / D PAK
1.E-01
50
1.E-01
60
2
T = 125 °C
c
T = 25 °C
T = 75 °C
c
c
Doc ID 018721 Rev 1
70
2
t (s)
V (V)
t(s)
p
1.E+00
1.E+00
R
80
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
70
60
50
40
30
20
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
1.E-03
0
100
1.E-03
10
I (A)
M
Z
1
th(j-c)
Single pulse
C(pF)
I
M
/R
δ = 0.5
th(j-c)
t
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
reverse voltage applied
(typical values, per diode)
1.E-02
1.E-02
TO-220FPAB
1.E-01
10
1.E-01
1.E+00
V
osc
TO-220FPAB
F = 1 MHz
T = 125 °C
T = 25 °C
c
= 30 mV
j
T = 25 °C
T = 75 °C
c
c
V (V)
t (s)
t(s)
p
R
1.E+00
1.E+01
RMS
100